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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA675T
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
DESCRIPTION
The PA675T is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.
PACKAGE DRAWING (Unit: mm)
0.2 -0
+0.1
0.15 -0.05
+0.1
1.25 0.1
2.1 0.1
6
5
4 0 to 0.1
FEATURES
* * * * Two MOS FET circuits in package the same size as SC-70 Automatic mounting supported Gate can be driven by a 1.5 V power source Because of its high input impedance, there's no need to consider a drive current * Since bias resistance can be omitted, the number of components required can be reduced
1
2
3 0.7 0.9 0.1
0.65
0.65
1.3 2.0 0.2
PIN CONNECTION
ORDERING INFORMATION
6 5 4
PART NUMBER
PACKAGE SC-88 (SSP)
1. 2. 3. 4. 5. 6. Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain 1 (S1) (G1) (D2) (S2) (G2) (D1)
PA675T
Note
Note Marking: SA
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (Tc = 25C) Drain Current (pulse)
Note
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
16 7.0 0.1 0.2 0.2 150 -55 to +150
V V A A W C C
1
2
3
Total Power Dissipation (TC = 25C) Channel Temperature Storage Temperature Note PW 10 ms, Duty Cycle 50%
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G15454EJ1V0DS00 (1st edition) Date Published May 2001 NS CP(K) Printed in Japan
(c)
2001
PA675T
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Ciss Coss Crss td(on) tr td(off) tf TEST CONDITIONS VDS = 16 V, VGS = 0 V VGS = 7.0 V, VDS = 0 V VDS = 3 V, ID = 10 A VDS = 3 V, ID = 10 mA VGS = 1.5 V, ID = 1 mA VGS = 2.5 V, ID = 10 mA VGS = 4.0 V, ID = 10 mA VDS = 3 V VGS = 0 V f = 1 MHz VDD = 3 V, ID = 10 mA VGS = 3 V RG = 10 0.5 20 20 7 5 10 13 3 15 70 100 110 50 15 12 0.8 MIN. TYP. MAX. 1.0 3.0 1.1 UNIT
A A
V mS pF pF pF ns ns ns ns
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS
Gate Voltage Waveform VGS 0 ID Drain Current Waveform = 1 s Duty Cycle 1% 10% 90% 90% ID 10%
0
DUT
RL VDD
VGS
90%
PG.
RG
10% td(off) toff
VGS 0
td(on) ton
tr
tf
2
Data Sheet G15454EJ1V0DS
PA675T
TYPICAL CHARACTERISTICS (TA = 25C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 300
PT - Total Power Dissipation - mW
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 VGS = 2.0 V 40
ID - Drain Current - mA
Free air 250 200 150 100 50
To
1.8 V
30
Pe
ro
ne
ta
l
un
20
1.6 V
it
10
1.4 V 1.2 V
0
25
50
75
100
125
150
0
TC - Ambient Temperature - C FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 500
|yfs| - Forward Transfer Admittance - mS
1 2 3 4 VDS - Drain to Source Voltage - V
5
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 TA = -25C 100 50 VGS = 1.5 V 20 10 2.5 V 5 0.5 1 2 5 4.0 V 10 20 50 100 200 500
VDS = 3 V 200 100
TA = -25C 25C 75C
50
20
10 5 10 20 50 100 ID - Drain Current - mA 200
ID - Drain Current - mA
RDS(on) - Drain to Source On-state Resistance -
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 TA = 25C 100 50
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 TA = 75C 100 50 VGS = 1.5 V
20 10
VGS = 1.5 V
20 10 5
2.5 V 4.0 V
2.5 V 5 0.5 1 2 5 4.0 V
10
20
50 100 200
500
0.5
1
2
5
10
20
50 100 200
500
ID - Drain Current - mA
ID - Drain Current - mA
Data Sheet G15454EJ1V0DS
3
PA675T
RDS(on) - Drain to Source On-state Resistance -
30 TA = -25C
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 TA = 25C
20
ID = 10 mA 1 mA
20
ID = 10 mA 1 mA
10
10
0
1 2 3 4 5 6 VGS - Gate to Source Voltage - V
7
0
1 2 3 4 5 6 VGS - Gate to Source Voltage - V
7
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 TA = 75C
ISD - Diode Forward Current - mA
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 200 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 VSD - Source to Drain Voltage - V 1.0
20
ID = 10 mA 1 mA
10
0
2 3 4 5 6 1 VGS - Gate to Source Voltage - V
7
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 50
td(on), tr, td(off), tf - Switching Time - ns Ciss, Crss, Coss, - Capacitance - pF
SWITCHING CHARACTERISTICS 500 VDD = 3 V VGS = 3 V tr 200
VGS = 0 V f = 1 MHz 20 10 5
Ciss Coss
100 50 tf td(on) 20 td(off)
2 1 Crss
0.5
1 2 5 10 20 VDS - Drain to Source Voltage - V
50
10
20
50 100 200 ID - Drain Current - mA
500
4
Data Sheet G15454EJ1V0DS
PA675T
[MEMO]
Data Sheet G15454EJ1V0DS
5
PA675T
[MEMO]
6
Data Sheet G15454EJ1V0DS
PA675T
[MEMO]
Data Sheet G15454EJ1V0DS
7
PA675T
* The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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